Global SiC Power Semiconductor Market growing at a CAGR of 25.7% from 2023 to 2031

Category : Semiconductor And Electronics | Published Date : Oct 2023

Key Market Overview

The SiC Power Semiconductor market is expected to reach USD 7,622.77 million by 2031. The market, which was valued at USD 987.85 million in 2022, USD 1,219.26 million in 2023, and is predicted to grow at a compound annual growth rate of 25.7% during the period 2023-2031.

The report highlights the rising demand of SiC power semiconductors due to the increasing adoption of industrial automation and robotics that require high-frequency operation for precise control and fast response times. Consegic Business Intelligence study also provides insights into the market's competitive landscape, market segmentation, and emerging technologies in the SiC Power Semiconductor market.

Global SiC Power Semiconductor Market By Overview

Global SiC Power Semiconductor Market

Consegic Business Intelligence provided an inclusive research report on the SiC power semiconductor market that evaluates multiple factors, such as market size, value, supply chain, regulatory environment, and trends. Industrial drives are expected to witness the fastest CAGR in the SiC (Silicon Carbide) power semiconductor market. Industrial drives, namely motor drives, and variable frequency drives (VFDs), demand power semiconductors that offer high efficiency. SiC power devices are known for the low conduction and switching losses, resulting in higher efficiency in motor control and drive applications. Additionally, SiC power devices exhibit better thermal performance, enabling industrial drives to operate at higher temperatures without compromising reliability. Consequently, the aforementioned factors including high-efficiency requirements and improved thermal performance are projected to drive the growth of the industrial drives segment during the forecast period.

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Market Dynamics



  • Increasing adoption of industrial automation and robotics is a significant driver for the growth of the SiC (Silicon Carbide) power semiconductors market.
  • Expansion of the renewable energy sector is contributing notably in propelling the growth of the SiC (Silicon Carbide) power semiconductors market.



  • High temperature sensitivity of SiC (Silicon Carbide) wafers and devices during the manufacturing process is restraining the growth of SiC power semiconductors market.

Market Segmentation:

Report Attributes Report Details
By Type RF Diodes, MOSFET, IGBT, Schottky Barrier Diodes (SBDS), Junction FET (JFET), Power Modules, Rectifiers, and Others
By Wafer Size 2 inch, 3 inch, 4 inch, 6 inch, and above 6 inch
By Wafer Type SiC epitaxial wafers and Blank SiC wafers
By Application EV Charging, Solar Energy System, UPS, Industrial Drives, Photovoltaics, and Others
By End-User Industrial, Automotive, Energy and Power, IT and Telecom, Transportation, Aerospace and Defense, and Others
By Region North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa

Competitive Landscape :

As per the study, the market is dominated by certain major companies such as Infineon Technologies AG, STMicroelectronics, GeneSiC Semiconductor Inc., and Semiconductor Components Industries, LLC that have a strong market position in current market circumstances. The market players compete for a firm market position through mergers and acquisitions, product innovations, and business strategies. Thus, evolving research and developments in the SiC power semiconductor market are expected to help market players adopt innovative ways of product creation to cater to the growing needs of various end-use industries.

  • Infineon Technologies AG
  • STMicroelectronics
  • GeneSiC Semiconductor Inc.
  • Semiconductor Components Industries, LLC
  • NXP Semiconductors
  • Texas instruments Inc.
  • Allegro MicroSystems, Inc.
  • ROHM CO., LTD.
  • TT Electronics
  • Renesas Electronics Corporation